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Title: Dislocation-related trap levels in nitride-based light emitting diodes

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Bologna 40127 (Italy)
  2. Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy)
  3. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
Publication Date:
OSTI Identifier:
22300165
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS; ELECTRONIC STRUCTURE; ELECTRONS; EV RANGE; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; QUANTUM WELLS; TRAPPING; TRAPS; VAPOR PHASE EPITAXY