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Title: Diamond micro-Raman thermometers for accurate gate temperature measurements

Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.
Authors:
; ;  [1]
  1. Center for Device Thermography and Reliability, H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)
Publication Date:
OSTI Identifier:
22300155
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACCURACY; ALUMINIUM COMPOUNDS; DIAMONDS; ELECTRON MOBILITY; EQUIPMENT; GALLIUM NITRIDES; METALS; RAMAN EFFECT; SURFACES; TEMPERATURE MEASUREMENT; THERMOGRAPHY; THERMOMETERS; TRANSISTORS