Diamond micro-Raman thermometers for accurate gate temperature measurements

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4879849· OSTI ID:22300155

Simon, Roland B.; Pomeroy, James W.; Kuball, Martin ^[1]

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1. Center for Device Thermography and Reliability, H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)

Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.

• OSTI ID: 22300155
• Journal Information: Applied Physics Letters, Vol. 104, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACCURACY
ALUMINIUM COMPOUNDS
DIAMONDS
ELECTRON MOBILITY
EQUIPMENT
GALLIUM NITRIDES
METALS
RAMAN EFFECT
SURFACES
TEMPERATURE MEASUREMENT
THERMOGRAPHY
THERMOMETERS
TRANSISTORS