Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography
- Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)
- P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow 119991 (Russian Federation)
We report on the emission dynamics of single In(Ga)As quantum dots formed in etched GaAs pits and integrated into micropillar cavities. The site-controlled quantum dots were fabricated by molecular beam epitaxy on nanoimprint lithography patterned GaAs(001) surfaces. Triggered single photon emission confirmed by photon autocorrelation measurements is demonstrated. Time-resolved photoluminescence experiments clearly show an effect of the cavity on the spontaneous emission rate of the quantum dot.
- OSTI ID:
- 22300152
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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