Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202{sup ¯}1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4879639· OSTI ID:22300140

Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Perlin, P.; Skierbiszewski, C. ^[1]; Muziol, G.; Turski, H.; Weyher, J. L. ^[1]; Chèze, C. ^[2]; Albrecht, M. ^[3]; Kucharski, R. ^[4]

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1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
2. TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland)
3. Leibniz Institute of Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)
4. Ammono S.A., Czerwonego Krzyża 2/31, 00-377 Warsaw (Poland)

No abstract prepared.

• OSTI ID: 22300140
• Journal Information: Applied Physics Letters, Vol. 104, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GALLIUM NITRIDES
LASER RADIATION
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
PLASMA
SEMICONDUCTOR LASERS
SUBSTRATES
ULTRAVIOLET RADIATION