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Title: Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202{sup ¯}1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

No abstract prepared.
Authors:
; ; ; ; ;  [1] ;  [2] ; ; ;  [1] ;  [3] ;  [4] ;  [5]
  1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
  2. (Poland)
  3. TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland)
  4. Leibniz Institute of Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)
  5. Ammono S.A., Czerwonego Krzyża 2/31, 00-377 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22300140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM NITRIDES; LASER RADIATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PLASMA; SEMICONDUCTOR LASERS; SUBSTRATES; ULTRAVIOLET RADIATION