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Title: High-voltage field effect transistors with wide-bandgap β-Ga{sub 2}O{sub 3} nanomembranes

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.
Authors:
 [1] ; ; ; ; ; ;  [2] ; ;  [3] ;  [4] ; ;  [5] ;  [5] ;  [6]
  1. Department of Materials Engineering, Korea Aerospace University, Gyeonggi, 412791 (Korea, Republic of)
  2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  3. Materials Department, University of California Santa Barbara, California 93106 (United States)
  4. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  5. Leibniz Institute for Crystal Growth, Max-Born Str., D-12489 Berlin (Germany)
  6. (Italy)
Publication Date:
OSTI Identifier:
22300133
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APPROPRIATE TECHNOLOGY; ELECTRIC POTENTIAL; ENERGY EFFICIENCY; FIELD EFFECT TRANSISTORS; GALLIUM OXIDES; MINIATURIZATION; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SWITCHES; TECHNOLOGY UTILIZATION