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Title: Erratum: “Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory” [Appl. Phys. Lett. 104, 183507 (2014)]

No abstract prepared.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [3]
  1. School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281 (United States)
  2. (United States)
  3. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22300125
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FILAMENTS; GAMMA RADIATION; HAFNIUM OXIDES; MEMORY DEVICES; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RANDOMNESS; STABILITY