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Title: Simulation-based design of a strained graphene field effect transistor incorporating the pseudo magnetic field effect

We present a numerical study on the performance of strained graphene-based field-effect transistors. A local strain less than 10% is applied over a central channel region of the graphene to induce the shift of the Dirac point in the channel region along the transverse momentum direction. The left and the right unstrained graphene regions are doped to be either n-type or p-type. By using the atomistic tight-binding model and a Green's function method, we predict that the gate voltage applied to the central strained graphene region can switch the drain current on and off with an on/off ratio of more than six orders of magnitude at room temperature. This is in spite of the absence of a bandgap in the strained channel region. Steeper subthreshold slopes below 60 mV/decade are also predicted at room temperature because of a mechanism similar to the band-to-band tunneling field-effect transistors.
Authors:
; ;  [1]
  1. Department of Electrical and Electronic Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
Publication Date:
OSTI Identifier:
22300118
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENTS; DOPED MATERIALS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GRAPHENE; GREEN FUNCTION; MAGNETIC FIELDS; NUMERICAL ANALYSIS; SIMULATION; STRAINS; SWITCHES; TEMPERATURE RANGE 0273-0400 K; TRANSVERSE MOMENTUM; TUNNEL EFFECT