Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4880720· OSTI ID:22300116

Kanai, S. ^[1]; Nakatani, Y. ^[2]; Yamanouchi, M.; Ikeda, S. ^[1]; Sato, H. ^[3]; Matsukura, F. ^[4]

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1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
2. University of Electro-communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585 (Japan)
3. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
4. WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

• OSTI ID: 22300116
• Journal Information: Applied Physics Letters, Vol. 104, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON COMPOUNDS
COBALT COMPOUNDS
ELECTRIC FIELDS
IRON COMPOUNDS
MAGNESIUM OXIDES
MAGNETIZATION
SPIN
SWITCHES
TUNNEL EFFECT