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Title: Electric field effects on spin accumulation in Nb-doped SrTiO{sub 3} using tunable spin injection contacts at room temperature

We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO{sub 3}. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO{sub 3} which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.
Authors:
; ; ;  [1] ; ;  [2]
  1. Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands)
  2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)
Publication Date:
OSTI Identifier:
22300115
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE TRANSPORT; DOPED MATERIALS; ELECTRIC FIELDS; INJECTION; INTERFACES; LIFETIME; NIOBIUM ADDITIONS; OXIDES; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SPIN; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K