Superconductivity observed in platinum-silicon interface

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4880901· OSTI ID:22300112

Kuo, Pai-Chia ^[1]; Chen, Chun-Wei ^[2]; Lee, Ku-Pin; Shiue, Jessie ^[1]

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1. Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China)
2. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

We report the discovery of superconductivity with an onset temperature of ∼0.6 K in a platinum-silicon interface. The interface was formed by using a unique focused ion beam sputtering micro-deposition method in which the energies of most sputtered Pt atoms are ∼2.5 eV. Structural and elemental analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy reveal a ∼ 7 nm interface layer with abundant Pt, which is the layer likely responsible for the superconducting transport behavior. Similar transport behavior was also observed in a gold-silicon interface prepared by the same technique, indicating the possible generality of this phenomenon.

• OSTI ID: 22300112
• Journal Information: Applied Physics Letters, Vol. 104, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
DEPOSITION
EV RANGE
GOLD
INTERFACES
ION BEAMS
LAYERS
PLATINUM
SILICON
SPUTTERING
SUPERCONDUCTIVITY
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY