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Title: Superconductivity observed in platinum-silicon interface

We report the discovery of superconductivity with an onset temperature of ∼0.6 K in a platinum-silicon interface. The interface was formed by using a unique focused ion beam sputtering micro-deposition method in which the energies of most sputtered Pt atoms are ∼2.5 eV. Structural and elemental analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy reveal a ∼ 7 nm interface layer with abundant Pt, which is the layer likely responsible for the superconducting transport behavior. Similar transport behavior was also observed in a gold-silicon interface prepared by the same technique, indicating the possible generality of this phenomenon.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ; ;  [1] ;  [2]
  1. Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China)
  2. (China)
  3. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
Publication Date:
OSTI Identifier:
22300112
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; DEPOSITION; EV RANGE; GOLD; INTERFACES; ION BEAMS; LAYERS; PLATINUM; SILICON; SPUTTERING; SUPERCONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY