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Title: Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

It is well-known that the performance of graphene electronic devices is often limited by extrinsic scattering related to resist residue from transfer, lithography, and other processes. Here, we report a polymer-assisted fabrication procedure that produces a clean graphene surface following device fabrication by a standard lithography process. The effectiveness of this improved lithography process is demonstrated by examining the temperature dependence of epitaxial graphene-metal contact resistance using the transfer length method for Ti/Au (10 nm/50 nm) metallization. The Landauer-Buttiker model was used to explain carrier transport at the graphene-metal interface as a function of temperature. At room temperature, a contact resistance of 140 Ω-μm was obtained after a thermal anneal at 523 K for 2 hr under vacuum, which is comparable to state-of-the-art values.
Authors:
;  [1] ; ; ; ; ; ; ; ; ;  [2] ;  [3]
  1. George Mason University, 4400 University Dr., Fairfax, Virginia 22030 (United States)
  2. U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, D.C. 20375 (United States)
  3. Sotera Defense Solutions, 2200 Defense Hwy. Suite 405, Crofton, Maryland 21114 (United States)
Publication Date:
OSTI Identifier:
22300110
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CARRIERS; ELECTRONIC EQUIPMENT; EPITAXY; GRAPHENE; INTERFACES; METALS; POLYMERS; SCATTERING; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K