Carrier behavior in special multilayer device composed of different transition metal oxide-based intermediate connectors

Journal Article · Mon Jun 02 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4881156· OSTI ID:22300097

Deng, Yan-Hong; Chen, Xiang-Yu; Ou, Qing-Dong; Wang, Qian-Kun; Jiang, Xiao-Cheng; Zhang, Dan-Dan; Li, Yan-Qing ^[1]

---

1. Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123 (China)

The impact of illumination on the connection part of the tandem organic light-emitting diodes was studied by using a special organic multilayer sample consisted of two organic active layers coupled with different transition metal oxide (TMO)-based intermediate connectors (ICs). Through measuring the current density-voltage characteristic, interfacial electronic structures, and capacitance-voltage characteristic, we observe an unsymmetrical phenomenon in current density-voltage and capacitance-voltage curves of Mg:Alq{sub 3}/MoO{sub 3} and MoO{sub 3} composed devices, which was induced by the charge spouting zone near the ICs region and the recombination state in the MoO{sub 3} layer. Moreover, Mg:Alq{sub 3}/MoO{sub 3} composed device displays a photovoltaic effect and the V{sub oc} shifts to forward bias under illumination. Our results demonstrate that the TMO-based IC structure coupled with photovoltaic effect can be a good approach for the study of photodetector, light sensor, and so on.

• OSTI ID: 22300097
• Journal Information: Applied Physics Letters, Vol. 104, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CONNECTORS
CURRENT DENSITY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRONIC STRUCTURE
ILLUMINANCE
LAYERS
LIGHT EMITTING DIODES
MOLYBDENUM OXIDES
ORGANIC SEMICONDUCTORS
PHOTOVOLTAIC EFFECT
SENSORS
TRANSITION ELEMENTS
VISIBLE RADIATION