skip to main content

Title: Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.
Authors:
; ; ; ;  [1] ; ;  [2] ; ; ;  [3]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
  2. Department of Chemistry, McGill University, 801 Sherbrooke St West, Montreal, Quebec H3A 0B8 (Canada)
  3. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
Publication Date:
OSTI Identifier:
22300090
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; CATALYSTS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; QUANTUM WIRES; RAMAN EFFECT; SCATTERING; STRAINS; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K NANOWIRES