Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Journal Article · Mon Jun 02 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4881558· OSTI ID:22300090

Wang, Q.; Zhao, S.; Connie, A. T.; Shih, I.; Gonzalez, T.; Andrews, M. P. ^[1]; Du, X. Z.; Lin, J. Y.; Jiang, H. X. ^[2]

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1. Department of Chemistry, McGill University, 801 Sherbrooke St West, Montreal, Quebec H3A 0B8 (Canada)
2. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

• OSTI ID: 22300090
• Journal Information: Applied Physics Letters, Vol. 104, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM NITRIDES
CATALYSTS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHONONS
PHOTOLUMINESCENCE
QUANTUM WIRES
RAMAN EFFECT
SCATTERING
STRAINS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
NANOWIRES