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Title: Green emission in carbon doped ZnO films

The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.
Authors:
; ; ; ; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052 (Australia)
  2. School of Chemical Engineering, Northwest University, Xi'an 710069 (China)
  3. Department of Materials Science and Engineering, National University of Singapore, 119260 (Singapore)
  4. Australian Nuclear Science and Technology Organization, (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234 (Australia)
Publication Date:
OSTI Identifier:
22300069
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARBON; DEFECTS; DOPED MATERIALS; ELECTRON SPIN RESONANCE; FILMS; INTERSTITIALS; MONOCRYSTALS; PHOTOLUMINESCENCE; THICKNESS; ZINC OXIDES