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Title: Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained with a top-down lithography method.
Authors:
;  [1] ; ;  [2]
  1. Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain)
  2. Instituto de Microelectrónica de Madrid (IMM-CNM-CSIC), 28760 Tres Cantos, Madrid (Spain)
Publication Date:
OSTI Identifier:
22300065
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; CROSS SECTIONS; ELECTRONIC EQUIPMENT; ETCHING; FABRICATION; OXIDATION; OXIDES; QUANTUM WIRES; SILICON; THICKNESS NANOWIRES