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Title: The effect of Ta interface on the crystallization of amorphous phase change material thin films

The crystallization of amorphous GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material films, with thickness between 10 and 100 nm, sandwiched between either Ta or SiO{sub 2} layers, was investigated by optical reflectivity. Ta cladding layers were found to increase the crystallization temperature, even for films as thick as 100 nm. X-Ray diffraction investigations of crystallized GeTe films showed a very weak texture in Ta cladded films, in contrast with the strong texture observed for SiO{sub 2} cladding layers. This study shows that crystallization mechanism of phase change materials can be highly impacted by interface effects, even for relatively thick films.
Authors:
 [1] ;  [2] ; ; ; ; ; ; ;  [1] ;  [3] ;  [4]
  1. CEA-LETI, MINATEC campus, 17 rue des Martyrs, F 38054 Grenoble (France)
  2. (France)
  3. LMGP, CNRS Grenoble-INP, MINATEC, 3 parvis Louis Néel, F 38016 Grenoble (France)
  4. (CNRS, UJF, UPS, INSA), 25 rue des Martyrs, F 38042 Grenoble Cedex 9 (France)
Publication Date:
OSTI Identifier:
22300063
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANTIMONY COMPOUNDS; CRYSTALLIZATION; GERMANIUM TELLURIDES; INTERFACES; LAYERS; PHASE CHANGE MATERIALS; REFLECTIVITY; SILICA; SILICON OXIDES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION