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Title: Separation of interlayer resistance in multilayer MoS{sub 2} field-effect transistors

We extracted the interlayer resistance between two layers in multilayer molybdenum disulfide (MoS{sub 2}) field-effect transistors by confirming that contact resistances (R{sub contact}) measured using the four-probe measurements were similar, within ∼30%, to source/drain series resistances (R{sub sd}) measured using the two-probe measurements. R{sub contact} values obtained from gated four-probe measurements exhibited gate voltage dependency. In the two-probe measurements, the Y-function method was applied to obtain the R{sub sd} values. By comparing those two R{sub contact} (∼9.5 kΩ) and R{sub sd} (∼12.3 kΩ) values in strong accumulation regime, we found the rationality that those two values had nearly the same properties, i.e., the Schottky barrier resistances and interlayer resistances. The R{sub sd} values of devices with two-probe source/drain electrodes exhibited thickness dependency due to interlayer resistance changes. The interlayer resistance between two layers was also obtained as ∼2.0 Ω mm.
Authors:
; ;  [1] ; ;  [1] ;  [2] ;  [3] ; ;  [4]
  1. School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
  2. (France)
  3. Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)
  4. School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22300055
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFUSION BARRIERS; ELECTRIC POTENTIAL; ELECTRODES; EQUIPMENT; FIELD EFFECT TRANSISTORS; LAYERS; MOLYBDENUM SULFIDES; PROBES; THICKNESS