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Title: Suppression of tin precipitation in SiSn alloy layers by implanted carbon

By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.
Authors:
 [1] ;  [2] ; ;  [1] ; ;  [3]
  1. Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark)
  2. (Belarus)
  3. Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstra├če 400, 01328 Dresden (Germany)
Publication Date:
OSTI Identifier:
22300047
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON ADDITIONS; CRYSTAL GROWTH; DEFECTS; DISLOCATIONS; HEAT TREATMENTS; LAYERS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; POINT DEFECTS; PRECIPITATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEGREGATION; SILICON ALLOYS; TIN; TIN ALLOYS; TRANSMISSION ELECTRON MICROSCOPY