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Title: Efficient simulation of the impact of interface grading on the transport and optical properties of semiconductor heterostructures

An efficient model is proposed to evaluate the impact of interface grading on the properties of semiconductor heterostructures. In the plane-wave approximation, the interface grading is taken into account by simply multiplying the Fourier components of the potential by a Gaussian function, which results only in a very small increase of the computation time. We show that the interface grading may affect the transition energies, the field strength for resonant coupling of subbands, and even the miniband formation in complex systems such as quantum-cascade lasers. This model provides a convenient tool for the incorporation of interface grading into the design of heterostructures.
Authors:
; ; ;  [1]
  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22300029
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; ELECTRIC CONDUCTIVITY; GAUSS FUNCTION; INTERFACES; LASER RADIATION; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SIMULATION; WAVE PROPAGATION