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Title: Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200 °C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
  2. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
  3. The University of Tokyo, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22300027
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMS; CAPACITORS; CHEMICAL BONDS; CORRELATIONS; DECOMPOSITION; DEPOSITION; ELECTRICAL PROPERTIES; GALLIUM ANTIMONIDES; HAFNIUM OXIDES; INTERFACES; METALS; MOS TRANSISTORS; SEMICONDUCTOR MATERIALS; STABILITY; SURFACES; THERMODYNAMIC PROPERTIES