Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

Journal Article · Mon Jun 09 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4882643· OSTI ID:22300027

Miyata, Noriyuki; Mori, Takahiro; Yasuda, Tetsuji ^[1]; Ohtake, Akihiro ^[2]; Ichikawa, Masakazu ^[3]

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1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
2. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
3. The University of Tokyo, Tokyo 113-8656 (Japan)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200 °C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

• OSTI ID: 22300027
• Journal Information: Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMS
CAPACITORS
CHEMICAL BONDS
CORRELATIONS
DECOMPOSITION
DEPOSITION
ELECTRICAL PROPERTIES
GALLIUM ANTIMONIDES
HAFNIUM OXIDES
INTERFACES
METALS
MOS TRANSISTORS
SEMICONDUCTOR MATERIALS
STABILITY
SURFACES
THERMODYNAMIC PROPERTIES