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Title: High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS{sub 2}-metal heterostructures

We present a study on the photodiode response of vertically stacked graphene/MoS{sub 2}/metal heterostructures in which MoS{sub 2} layers are doped with various plasma species. In comparison with undoped heterostructures, such doped ones exhibit significantly improved quantum efficiencies in both photovoltaic and photoconductive modes. This indicates that plasma-doping-induced built-in potentials play an important role in photocurrent generation. As compared to indium-tin-oxide/ MoS{sub 2}/metal structures, the presented graphene/MoS{sub 2}/metal heterostructures exhibit greatly enhanced quantum efficiencies in the blue-near ultraviolet region, which is attributed to the low density of recombination centers at graphene/MoS{sub 2} heterojunctions. This work advances the knowledge for making photo-response devices based on layered materials.
Authors:
; ; ; ; ;  [1]
  1. Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Publication Date:
OSTI Identifier:
22300026
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; EQUIPMENT; GRAPHENE; HETEROJUNCTIONS; INDIUM OXIDES; LAYERS; MOLYBDENUM SULFIDES; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECT; PLASMA; QUANTUM EFFICIENCY; RECOMBINATION; TIN ADDITIONS; ULTRAVIOLET RADIATION