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Title: High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at V{sub GS} = −40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D simulations, it is found that the polarization gradient induced by the gate metallization forms a P-type pseudo-doping region under the gate between the tensile surface and the compressively strained bulk AlGaN barrier layer. The strain induced by the gate metallization can compensate for the piezoelectric component. As a result, the gate contact can operate at temperatures as high as 700 °C and can withstand a large reverse bias of up to −100 V, which is interesting for high-performance transistors dedicated to power applications.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5] ;  [6] ;  [7]
  1. Institut d'Electronique de Microélectronique et de Nanotechnologie, UMR-CNRS 8520, USTL, Avenue Poincaré, 59652 Villeneuve d'Ascq (France)
  2. Laboratoire de Microélectronique, Université Djilali Liabès, 22000 Sidi Bel Abbès (Algeria)
  3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30324-0250 (United States)
  4. (France)
  5. LMI, Electronic Department, Faculty of Engineering, Mentouri University of Constantine, Constantine (Algeria)
  6. Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, 91460 Marcoussis (France)
  7. Solar Terrestrial Center of Excellence, Royal Observatory of Belgium, Circular 3, B-1180 Brussels (Belgium)
Publication Date:
OSTI Identifier:
22300018
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DEPLETION LAYER; DIFFUSION BARRIERS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; LEAKAGE CURRENT; PHOSPHORUS ADDITIONS; PIEZOELECTRICITY; POLARIZATION; SIMULATION; SPUTTERING; STRAINS; STRESSES; SURFACES; TITANIUM; TITANIUM NITRIDES