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Title: Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry

The continuous downscaling of transistors results in nanoscale devices which require fewer and fewer charged carriers for their operation. The ultimate charge controlled device, the single-electron transistor (SET), controls the transfer of individual electrons. It is also the most sensitive electrometer, and as a result the electron transport through it can be dramatically affected by nearby charges. Standard direct-current characterization techniques, however, are often unable to unambiguously detect and resolve the origin of the observed changes in SET behavior arising from changes in the charge state of a capacitively coupled trap. Using a radio-frequency (RF) reflectometry technique, we are able to unequivocally detect this process, in very close agreement with modeling of the trap's occupation probability.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [2] ;  [3] ; ;  [1] ;  [2] ; ;  [4]
  1. Université Grenoble Alpes, INAC-SPSMS, F-38000 Grenoble (France)
  2. (France)
  3. (United States)
  4. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
Publication Date:
OSTI Identifier:
22300016
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIERS; CHANNELING; CHARGE STATES; DETECTION; DIRECT CURRENT; ELECTROMETERS; ELECTRONS; NANOSTRUCTURES; PROBABILITY; RADIOWAVE RADIATION; SILICON; TRANSISTORS; TRAPS NANOELECTRONICS