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Title: Electric field-induced magnetic switching in Mn:ZnO film

A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film by applying a reversible electric field. A significant enhancement of the ferromagnetism of the film, to about five times larger than that in the initial (as-grown) state (IS), was obtained by switching the film into the low resistance state. X-ray photoelectron spectroscopy demonstrated the existence of abundant oxygen vacancies in the IS of the film. We suggest that this electric field-induced magnetic switching effect originates with the migration and redistribution of oxygen vacancies during RS. Our work indicates that electric switching is an effective and simple method to increase the ferromagnetism of diluted magnetic oxide films. This provides a promising direction for research in spintronic devices.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1] ; ;  [3]
  1. Key Laboratory of Advanced Films of Hebei Province, College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China)
  2. (China)
  3. College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang 050024 (China)
Publication Date:
OSTI Identifier:
22300011
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC FIELDS; EQUIPMENT; FERROMAGNETISM; FILMS; MAGNETIC PROPERTIES; MANGANESE ADDITIONS; MIGRATION; MODULATION; OXYGEN; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES