skip to main content

SciTech ConnectSciTech Connect

Title: The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces

Energy-band alignments for molybdenum disulphide (MoS{sub 2}) films on high-k dielectric oxides have been studied using photoemission spectroscopy. The valence band offset (VBO) at monolayer MoS{sub 2}/Al{sub 2}O{sub 3} (ZrO{sub 2}) interface was measured to be 3.31 eV (2.76 eV), while the conduction-band offset (CBO) was 3.56 eV (1.22 eV). For bulk MoS{sub 2}/Al{sub 2}O{sub 3} interface, both VBO and CBO increase by ∼0.3 eV, due to the upwards shift of Mo 4d{sub z{sup 2}} band. The symmetric change of VBO and CBO implies Fermi level pinning by interfacial states. Our finding ensures the practical application of both p-type and n-type MoS{sub 2} based complementary metal-oxide semiconductor and other transistor devices using Al{sub 2}O{sub 3} and ZrO{sub 2} as gate materials.
Authors:
; ; ; ;  [1]
  1. Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
Publication Date:
OSTI Identifier:
22300001
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; DIELECTRIC MATERIALS; EQUIPMENT; FERMI LEVEL; FILMS; INTERFACES; MOLYBDENUM; MOLYBDENUM SULFIDES; MOS TRANSISTORS; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SYMMETRY; TRANSISTORS; ZIRCONIUM OXIDES