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Title: Pulsed laser deposition of epitaxial BeO thin films on sapphire and SrTiO{sub 3}

Epitaxial beryllia thin films were grown by pulsed laser deposition on Al{sub 2}O{sub 3}(001) and SrTiO{sub 3}(111) substrates. Nearly relaxed epitaxial films were obtained on both substrates at growth temperatures of up to about 600 °C. Crystalline films with expanded lattice parameters were obtained even at room temperature. The maximum growth temperature was limited by a loss of beryllium from the film surface. The volatility of beryllium appeared to be caused by the slow oxidation kinetics at the film surface and the re-sputtering effect of high-energy Be and BeO species in the ablation plume. Time-of-flight plume composition analysis suggested that the target surface became Be metal rich at low oxygen pressures, reducing the growth rate of beryllia films.
Authors:
; ;  [1]
  1. Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
Publication Date:
OSTI Identifier:
22299999
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABLATION; ALUMINIUM OXIDES; BERYLLIUM; BERYLLIUM OXIDES; ENERGY BEAM DEPOSITION; EPITAXY; LASER RADIATION; LATTICE PARAMETERS; LOSSES; OXIDATION; PULSED IRRADIATION; SAPPHIRE; SPUTTERING; STRONTIUM TITANATES; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIME-OF-FLIGHT METHOD