Pulsed laser deposition of epitaxial BeO thin films on sapphire and SrTiO{sub 3}

Journal Article · Mon Jun 09 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883377· OSTI ID:22299999

Peltier, Thomas; Takahashi, Ryota; Lippmaa, Mikk ^[1]

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1. Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)

Epitaxial beryllia thin films were grown by pulsed laser deposition on Al{sub 2}O{sub 3}(001) and SrTiO{sub 3}(111) substrates. Nearly relaxed epitaxial films were obtained on both substrates at growth temperatures of up to about 600 °C. Crystalline films with expanded lattice parameters were obtained even at room temperature. The maximum growth temperature was limited by a loss of beryllium from the film surface. The volatility of beryllium appeared to be caused by the slow oxidation kinetics at the film surface and the re-sputtering effect of high-energy Be and BeO species in the ablation plume. Time-of-flight plume composition analysis suggested that the target surface became Be metal rich at low oxygen pressures, reducing the growth rate of beryllia films.

• OSTI ID: 22299999
• Journal Information: Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABLATION
ALUMINIUM OXIDES
BERYLLIUM
BERYLLIUM OXIDES
ENERGY BEAM DEPOSITION
EPITAXY
LASER RADIATION
LATTICE PARAMETERS
LOSSES
OXIDATION
PULSED IRRADIATION
SAPPHIRE
SPUTTERING
STRONTIUM TITANATES
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TIME-OF-FLIGHT METHOD