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Title: Origin of the current discretization in deep reset states of an Al{sub 2}O{sub 3}/Cu-based conductive-bridging memory, and impact on state level and variability

In this paper, we develop a Quantum-Point-Contact (QPC) model describing the state conduction in a W/Al{sub 2}O{sub 3}/TiW/Cu Conductive-Bridging Memory cell (CBRAM). The model allows describing both the voltage- and the temperature-dependence of the conduction. For deep current levels, a resistance component is added in series to the point-contact constriction to account for electron scattering in the residual filament. The fitting of single-particle perturbation also allowed to estimate the number and effective size of the conduction-controlling particles in the QPC constriction. The results clearly point to smaller particles for CBRAM (Cu particles) as compared to oxide-based resistive RAM involving oxygen-vacancy defects, which is discussed as a possible origin of deeper reset level obtained in CBRAM. We also evidence a beneficial impact of this smaller particle size on lower Random-Telegraph-Noise amplitude measured on CBRAM devices.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1] ;  [3]
  1. IMEC, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (Belgium)
  3. KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, 3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22299996
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; COPPER; CRYSTAL DEFECTS; CURRENTS; DISTURBANCES; ELECTRIC CONTACTS; ELECTRONS; FILAMENTS; MEMORY DEVICES; OXYGEN; PERTURBATION THEORY; SCATTERING; TEMPERATURE DEPENDENCE; VACANCIES