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Title: Inelastic electron tunneling spectroscopy of local “spin accumulation” devices

We investigate the origin of purported “spin accumulation” signals observed in local “three-terminal” (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and magnetic field dependences of the IET spectra were found to account for the dominant contribution to 3T magnetoresistance, thus indicating that it arises from inelastic tunneling through impurities and defects at junction interfaces and within the barrier, rather than from spin accumulation due to pure elastic tunneling into bulk Si as has been previously assumed.
Authors:
; ;  [1]
  1. Department of Physics and CNAM, University of Maryland, College Park, Maryland 20742 (United States)
Publication Date:
OSTI Identifier:
22299995
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEFECTS; DIFFUSION BARRIERS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRON SPECTROSCOPY; EQUIPMENT; IMPURITIES; INTERFACES; MAGNETIC FIELDS; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; SPECTRA; SPIN; TUNNEL EFFECT