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Title: Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states

The electronic and ionic transports in 32–56 nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400 °C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17} cm{sup −3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.
Authors:
;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  2. Department of Chemical Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  3. Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
  4. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
Publication Date:
OSTI Identifier:
22299933
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; ARGON; DEFECTS; DENSITY; DETECTION; DIELECTRIC MATERIALS; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRON MOBILITY; EMISSION; FILMS; ION MOBILITY; PASSIVATION; POLARIZATION; SCHOTTKY BARRIER DIODES; SOLIDS; TEMPERATURE RANGE 0400-1000 K