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Title: Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperature reported for GaN based transistors, so far.
Authors:
;  [1] ;  [2] ; ;  [3] ;  [2] ;  [1] ;  [2] ;  [2]
  1. Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey)
  2. (Turkey)
  3. UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey)
Publication Date:
OSTI Identifier:
22299927
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EQUIPMENT; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HOLLOW CATHODES; LAYERS; PLASMA; POLYCRYSTALS; TEMPERATURE RANGE 0400-1000 K; THIN FILMS