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Title: Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions

Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al{sub 2}O{sub 3} layer following vacuum and O{sub 2} anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al{sub 2}O{sub 3}/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [3]
  1. The Russell Berrie Nanotechnology Institute, Technion–Israel Institute of Technology, Haifa 32000 (Israel)
  2. Department of Materials Science and Engineering, Technion–Israel Institute of Technology, Haifa 32000 (Israel)
  3. (Israel)
Publication Date:
OSTI Identifier:
22299926
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; GALLIUM ARSENIDES; INDIUM; INDIUM ARSENIDES; LAYERS; LEAKAGE CURRENT; MASS SPECTROSCOPY; NICKEL; PHOTOEMISSION; TIME-OF-FLIGHT METHOD; X RADIATION