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Title: Auger electron nanoscale mapping and x-ray photoelectron spectroscopy combined with gas cluster ion beam sputtering to study an organic bulk heterojunction

The lateral and vertical distributions of organic p/n bulk heterojunctions for an organic solar cell device are, respectively, investigated using nanometer-scale Auger electron mapping and using X-ray photoelectron spectroscopy (XPS) with Ar gas cluster ion beam (GCIB) sputtering. The concentration of sulfur, present only in the p-type material, is traced to verify the distribution of p-type (donor) and n-type (acceptor) materials in the blended structure. In the vertical direction, a considerable change in atomic sulfur concentration is observed using XPS depth profiling with Ar GCIB sputtering. In addition, Auger electron mapping of sulfur reveals the lateral 2-dimensional distribution of p- and n-type materials. The combination of Auger electron mapping with Ar GCIB sputtering should thereby allow the construction of 3-dimensional distributions of p- and n-type materials in organic photovoltaic cells.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. Samsung Advanced Institute of Technology, Gyeonggi-do 443-803 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22299924
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON IONS; AUGER EFFECT; DEPTH; DISTRIBUTION; ELECTRONS; HETEROJUNCTIONS; ION BEAMS; ION PAIRS; NANOSTRUCTURES; ORGANIC SEMICONDUCTORS; ORGANIC SOLAR CELLS; SPUTTERING; SULFUR; THREE-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL CALCULATIONS; X-RAY PHOTOELECTRON SPECTROSCOPY