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Title: Electronic properties of polycrystalline graphene under large local strain

To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.
Authors:
; ; ; ; ; ; ;  [1] ;  [2] ; ;  [1] ;  [3] ;  [4]
  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China)
  2. Institute of Life Sciences, Jiangsu University, Zhenjiang 212013, Jiangsu Province (China)
  3. (China)
  4. Department of Physics, Tsinghua University, Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22299916
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER DENSITY; CARRIER MOBILITY; ELECTRONS; EQUIPMENT; GRAIN BOUNDARIES; GRAPHENE; HOLES; MOLTEN SALTS; NANOSTRUCTURES; POLYCRYSTALS; SCATTERING; STRAINS