Electronic properties of polycrystalline graphene under large local strain
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China)
- Institute of Life Sciences, Jiangsu University, Zhenjiang 212013, Jiangsu Province (China)
- Department of Physics, Tsinghua University, Beijing 100084 (China)
To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.
- OSTI ID:
- 22299916
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Magnetoelastoresistance in WTe 2 : Exploring electronic structure and extremely large magnetoresistance under strain
Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition