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Title: Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and V{sub Zn} in ZnO:Ga

Ga-doped ZnO (GZO) films grown by pulsed-laser deposition on quartz and other lattice-mismatched substrates can routinely attain resistivities of 2 × 10{sup −4} Ω·cm and thus compete with Sn-doped In{sub 2}O{sub 3} (ITO) in large-area transparent-electrode applications. Nondestructive, high-resolution (1-mm) maps of thickness d, concentration n, and mobility μ on such films can be obtained automatically from commercial spectroscopic ellipsometers. From n and μ, degenerate-electron scattering theory yields donor N{sub D} and acceptor N{sub A} concentrations at each point. Finally, N{sub D} and N{sub A} can be identified as [Ga] and [V{sub Zn}], respectively, demonstrating high-density mapping of impurities and point defects in a semiconductor thin film.
Authors:
 [1] ;  [2] ;  [2] ; ;  [3]
  1. Semiconductor Research Center, Wright State University, 3640 Colonel Glenn Hwy., Dayton, Ohio 45435 (United States)
  2. (United States)
  3. Air Force Research Laboratory Sensors Directorate, 2241 Avionics Circle, Wright-Patterson AFB, Ohio 45433 (United States)
Publication Date:
OSTI Identifier:
22299894
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; DENSITY; DOPED MATERIALS; ELECTRODES; ELLIPSOMETERS; ENERGY BEAM DEPOSITION; GALLIUM ADDITIONS; IMPURITIES; INDIUM OXIDES; LASER RADIATION; POINT DEFECTS; PULSED IRRADIATION; RESOLUTION; SCATTERING; SEMICONDUCTOR MATERIALS; SUBSTRATES; THICKNESS; THIN FILMS; TIN ADDITIONS; ZINC OXIDES