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Title: Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}–10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.
Authors:
; ; ;  [1] ; ;  [2]
  1. School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
  2. School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22299892
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; CHARGE TRANSPORT; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; PEROVSKITE; PLATINUM; POLYCRYSTALS; STRONTIUM TITANATES; SUBSTRATES; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION