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Title: Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques

Micron-sized, periodic crystalline Silicon columns on glass substrate were electrically contacted with a transparent conductive oxide front contact and a focused ion beam processed local back contact. Individual column contacts as well as arrays of >100 contacted columns were processed. Current-voltage characteristics of the devices were determined. By comparison with characteristics obtained from adapted device simulation, the absorber defect density was reconstructed. The contacting scheme allows the fabrication of testing devices in order to evaluate the electronic potential of promising semiconductor microstructures.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. TU Berlin, FG HLB/PVcomB, Sekr. E4, Einsteinufer 19, D-10587 Berlin (Germany)
  2. Helmholtz-Zentrum Berlin für Materialien und Energie, E-IS, Kekuléstr. 5, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22299891
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; CURRENTS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; GLASS; ION BEAMS; MICROSTRUCTURE; OPACITY; OXIDES; PERIODICITY; SEMICONDUCTOR MATERIALS; SILICON; SIMULATION; SUBSTRATES