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Title: Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1]
  1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Electronics and Information Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049 (China)
  2. (Viet Nam)
Publication Date:
OSTI Identifier:
22299886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ETCHING; INTERFERENCE; LASER RADIATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; STANDING WAVES; SURFACE PROPERTIES