Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

Journal Article · Mon Jun 16 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883880· OSTI ID:22299886

Khuat, Vanthanh ^[1]; Chen, Tao; Gao, Bo; Si, Jinhai; Ma, Yuncan; Hou, Xun ^[1]

---

1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Electronics and Information Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049 (China)

Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

• OSTI ID: 22299886
• Journal Information: Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ETCHING
INTERFERENCE
LASER RADIATION
SCANNING ELECTRON MICROSCOPY
SILICON CARBIDES
STANDING WAVES
SURFACE PROPERTIES