Electrical characteristics of Ni Ohmic contact on n-type GeSn

Journal Article · Mon Jun 16 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883748· OSTI ID:22299884

Li, H.; Lee, L. C.; Lee, C. P. ^[1]; Su, L. H.; Suen, Y. W. ^[2]

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1. Center for Nano Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan (China)
2. Department of Physics and Institute of Nano Science, National Chung Hsing University, Taichung 402, Taiwan (China)

We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 °C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity.

• OSTI ID: 22299884
• Journal Information: Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
FILMS
GERMANIUM COMPOUNDS
INTERFACES
LAYERS
NICKEL
N-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SPECTROMETERS
TIN COMPOUNDS