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Title: Electrical characteristics of Ni Ohmic contact on n-type GeSn

We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 °C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity.
Authors:
;  [1] ; ;  [2] ; ;  [3]
  1. Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China)
  2. Center for Nano Science and Technology, National Chiao Tung University, Hsinchu 300, Taiwan (China)
  3. Department of Physics and Institute of Nano Science, National Chung Hsing University, Taichung 402, Taiwan (China)
Publication Date:
OSTI Identifier:
22299884
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; FILMS; GERMANIUM COMPOUNDS; INTERFACES; LAYERS; NICKEL; N-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; SPECTROMETERS; TIN COMPOUNDS