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Title: Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58 meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm{sup −1} (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.
Authors:
 [1] ;  [2] ;  [3]
  1. University of Neuchâtel, Institute of Physics, 51 Avenue de Bellevaux, Neuchâtel, CH–2009 (Switzerland)
  2. Avogy, Inc., 677 River Oaks Parkway, San Jose, California 95134 (United States)
  3. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, D-79108 Freiburg i. Brsg. (Germany)
Publication Date:
OSTI Identifier:
22299877
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ALUMINIUM COMPOUNDS; CURRENTS; ELECTROLUMINESCENCE; GALLIUM NITRIDES; INJECTION; ORGANOMETALLIC COMPOUNDS; PHONONS; QUANTUM WELLS; SPECTRA; VAPOR PHASE EPITAXY