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Title: Near-infrared electroluminescence and photo detection in InGaAs p-i-n microdisks grown by selective area growth on silicon

Microselective-area growth of p-i-n InGaAs disks on (111) silicon by metalorganic chemical vapor deposition is a promising technology for III/V-on-Si integration. As a proof-of-concept, room-temperature electroluminescence is reported from ensembles of p-i-n InGaAs-on-Si micro-disks. The observed spectrum shows peak luminescence at 1.78 μm with a local maxima at 1.65 μm. The disks are also shown to generate a measurable photo current when illuminated by infrared light with less energy than the silicon bandgap energy. This makes these InGaAs-on-Si disks a promising technology for monolithic integration of light sources and detectors with silicon photonics and complementary metal-oxide-semiconductor electronics for optical communication, sensing, and imaging.
Authors:
 [1] ;  [2] ;  [2] ;  [3]
  1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan)
  2. Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Bunkyo, Tokyo 113-8656 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22299874
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; DETECTION; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIGHT SOURCES; NEAR INFRARED RADIATION; OXIDES; PHOTODETECTORS; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SPECTRA; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION