Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask

Shih, Fu-Yu; Chen, Shao-Yu; Wu, Tsuei-Shin; Wang, Wei-Hua; Liu, Cheng-Hua; Chen, Yang-Fang; Ho, Po-Hsun; Chen, Chun-Wei

doi:10.1063/1.4884305

Title: Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask

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Abstract

Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by performing electron-beam (e-beam) lithography. However, e-beam lithography is not applicable in certain situations, e.g., cases in which the e-beam resist does not adhere to the substrates or the intrinsic properties of the 2D materials are greatly altered and degraded. Here, we present a residue-free approach for fabricating high-performance graphene devices by patterning a thin film of e-beam resist as a stencil mask. This technique can be generally applied to substrates with varying surface conditions, while causing negligible residues on graphene. The technique also preserves the design flexibility offered by e-beam lithography and therefore allows us to fabricate multi-probe metallic contacts. The graphene field-effect transistors fabricated by this method exhibit smooth surfaces, high mobility, and distinct magnetotransport properties, confirming the advantages and versatility of the presented residue-free technique for the fabrication of devices composed of 2D materials.

Authors:

Shih, Fu-Yu ^[1]; Chen, Shao-Yu; Wu, Tsuei-Shin; Wang, Wei-Hua ^[2]; Liu, Cheng-Hua; Chen, Yang-Fang ^[1]; Ho, Po-Hsun; Chen, Chun-Wei ^[3]

Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China)
Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

Publication Date:: Sun Jun 15 00:00:00 EDT 2014

OSTI Identifier:: 22299861

Resource Type:: Journal Article

Journal Name:: AIP Advances

Additional Journal Information:: Journal Volume: 4; Journal Issue: 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTALS; ELECTRON BEAMS; FABRICATION; FIELD EFFECT TRANSISTORS; FLEXIBILITY; GRAPHENE; NANOSTRUCTURES; SUBSTRATES; THIN FILMS

Citation Formats


                    Shih, Fu-Yu, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan, Chen, Shao-Yu, Wu, Tsuei-Shin, Wang, Wei-Hua, Liu, Cheng-Hua, Chen, Yang-Fang, Ho, Po-Hsun, and Chen, Chun-Wei. Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4884305.

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                    Shih, Fu-Yu, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan, Chen, Shao-Yu, Wu, Tsuei-Shin, Wang, Wei-Hua, Liu, Cheng-Hua, Chen, Yang-Fang, Ho, Po-Hsun, & Chen, Chun-Wei. Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask.  United States.  https://doi.org/10.1063/1.4884305

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                    Shih, Fu-Yu, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan, Chen, Shao-Yu, Wu, Tsuei-Shin, Wang, Wei-Hua, Liu, Cheng-Hua, Chen, Yang-Fang, Ho, Po-Hsun, and Chen, Chun-Wei. 2014.  
        "Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask".  United States.  https://doi.org/10.1063/1.4884305.

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@article{osti_22299861,

  title        = {Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask},

  author       = {Shih, Fu-Yu and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan and Chen, Shao-Yu and Wu, Tsuei-Shin and Wang, Wei-Hua and Liu, Cheng-Hua and Chen, Yang-Fang and Ho, Po-Hsun and Chen, Chun-Wei},

  abstractNote = {Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by performing electron-beam (e-beam) lithography. However, e-beam lithography is not applicable in certain situations, e.g., cases in which the e-beam resist does not adhere to the substrates or the intrinsic properties of the 2D materials are greatly altered and degraded. Here, we present a residue-free approach for fabricating high-performance graphene devices by patterning a thin film of e-beam resist as a stencil mask. This technique can be generally applied to substrates with varying surface conditions, while causing negligible residues on graphene. The technique also preserves the design flexibility offered by e-beam lithography and therefore allows us to fabricate multi-probe metallic contacts. The graphene field-effect transistors fabricated by this method exhibit smooth surfaces, high mobility, and distinct magnetotransport properties, confirming the advantages and versatility of the presented residue-free technique for the fabrication of devices composed of 2D materials.},

  doi          = {10.1063/1.4884305},

  url          = {https://www.osti.gov/biblio/22299861},
  journal      = {AIP Advances},

  issn         = {2158-3226},

  number       = 6,

  volume       = 4,

  place        = {United States},

  year         = {Sun Jun 15 00:00:00 EDT 2014},

  month        = {Sun Jun 15 00:00:00 EDT 2014}

}

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