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Title: Spin filtering in a δ-doped magnetic-electric-barrier nanostructure

We report a theoretical study on spin-polarized transport in a δ-doped magnetic-electric-barrier nanostructure, which can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure under an applied voltage and by using atomic layer doping technique. The spin-polarized behavior of the electron in this device is found to be quite sensitive to the δ-doping. One can conveniently tune the degree of the electron spin polarization by adjusting the weight and/or position of the δ-doping. Thus, the involved nansosystem can be employed as a controllable spin filter, which may be helpful for exploiting new spin-polarized source for spintronics applications.
Authors:
; ; ;  [1]
  1. College of Science, Guilin University of Technology, Guilin 541004 (China)
Publication Date:
OSTI Identifier:
22299769
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEPOSITS; DOPED MATERIALS; ELECTRIC POTENTIAL; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION