skip to main content

Title: Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS{sub 2}

In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS{sub 2} under different treatments. We find that by simple ambient annealing treatment in the range of 200 °C to 400 °C, the PL emission can be greatly enhanced by a factor up to two orders of magnitude. This enhancement can be attributed to two factors: first, the formation of Mo-O bonds during ambient exposure introduces an effective p-doping in the MoS{sub 2} layer; second, localized electrons formed around Mo-O bonds related defective sites where the electrons can be effectively localized with higher binding energy resulting in efficient radiative excitons recombination. Time resolved PL decay measurement showed that longer lifetime of the treated sample consistent with the higher quantum efficiency in PL. These results give more insights to understand the luminescence properties of the MoS{sub 2}.
Authors:
; ; ; ; ; ;  [1] ; ; ;  [2]
  1. Key Laboratory of Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
  2. National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22299635
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BINDING ENERGY; DEFECTS; ELECTRONS; LAYERS; MOLYBDENUM SULFIDES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; RECOMBINATION