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Title: Magnetic anisotropies in epitaxial Fe{sub 3}O{sub 4}/GaAs(100) patterned structures

Previous studies on epitaxial Fe{sub 3}O{sub 4} rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizing a 6-nm-thick epitaxial Fe{sub 3}O{sub 4} thin film on GaAs(100), where the fourfold magnetocrystalline anisotropy is negligible. We demonstrate that in the Fe{sub 3}O{sub 4} planar wires patterned from our thin film, such a unique magnetic anisotropy system has been preserved, and relatively simple magnetic domain configurations compared to those previous reports can be obtained.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Physics, Southeast University, Nanjing 211189 (China)
  2. NanoElectronics Group, MESA Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede (Netherlands)
  3. (Singapore)
  4. Department of Physics, University of York, York YO10 5DD (United Kingdom)
  5. Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York, YO10 5DD (United Kingdom)
Publication Date:
OSTI Identifier:
22299614
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 10; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; DOMAIN STRUCTURE; EPITAXY; FERRITE; FERRITES; GALLIUM ARSENIDES; IRON OXIDES; SPIN; THIN FILMS