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Title: Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging

Scanning moiré fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi{sub 2} source and drain. Nanometer-scale SMFs were formed with a scanning grating size of d{sub s} at integer multiples of the Si crystal lattice spacing d{sub l} (d{sub s} ∼ nd{sub l}, n = 2, 3, 4, 5). The moiré fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%.
Authors:
; ; ; ;  [1] ;  [2]
  1. Memory Analysis Science and Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701 (Korea, Republic of)
  2. EM Business Unit, JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan)
Publication Date:
OSTI Identifier:
22299611
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 10; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACCURACY; COBALT SILICIDES; CRYSTAL LATTICES; ELECTRONIC EQUIPMENT; STRAINS; TRANSMISSION ELECTRON MICROSCOPY