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Title: Effects of oxygen vacancies on dielectric, electrical, and ferroelectric properties of Ba{sub 4}Nd{sub 2}Fe{sub 2}Nb{sub 8}O{sub 30} ceramics

Effects of oxygen vacancies on the dielectric, electrical, and ferroelectric properties of Ba{sub 4}Nd{sub 2}Fe{sub 2}Nb{sub 8}O{sub 30} ceramics were investigated. A dielectric relaxation above T{sub c} can be ascribed to the trap-controlled ac conduction around doubly ionized oxygen vacancies. The dc conductivity of the N{sub 2}-annealed and O{sub 2}-annealed samples is attributed to the long-range motion of the V{sub o}{sup ⋅⋅}, and that of the as-sintered sample is considered to be governed by the electronic and oxygen-vacancy ionic mixed conduction mechanism. Low concentration and random distributed oxygen vacancies are propitious to the domain switching, while high concentration and allied oxygen defects hinder the domain-wall movement.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China)
  2. (China)
  3. College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014 (China)
  4. Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22293117
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CERAMICS; CONCENTRATION RATIO; CRYSTAL DEFECTS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; FERROELECTRIC MATERIALS; NITROGEN; OXYGEN; VACANCIES