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Title: Examination of hot-carrier stress induced degradation on fin field-effect transistor

Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (V{sub TH}) shift, substrate current (I{sub B}), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the V{sub TH} shift was largest at V{sub G} = 0.3 V{sub D}, indicating that the V{sub TH} shift was dominated by interface state generation. Although the strongest impact ionization occurred at V{sub G} = V{sub D}, the V{sub TH} shift was mainly caused by electron trapping resulting from a large gate leakage current.
Authors:
; ; ; ; ; ;  [1] ; ; ; ;  [2] ;  [3]
  1. Department of Electronic Engineering, National Kaohsiung Normal University, No. 62, Shenjhong Rd., Yanchao Dist., Kaohsiung City 824, Taiwan (China)
  2. Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nanzih District, Kaohsiung City 811, Taiwan (China)
  3. Department of Biomedical Engineering, Hungkuang University, No. 1018, Sec. 6, Taiwan Boulevard, Shalu District, Taichung City 433, Taiwan (China)
Publication Date:
OSTI Identifier:
22293112
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; ELECTRIC POTENTIAL; ELECTRONS; FIELD EFFECT TRANSISTORS; INTERFACES; IONIZATION; LEAKAGE CURRENT; STRESSES; SUBSTRATES; TRAPPING