Examination of hot-carrier stress induced degradation on fin field-effect transistor

Journal Article · Mon Feb 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866437· OSTI ID:22293112

Yang, Yi-Lin; Yen, Tzu-Sung; Ku, Chao-Chen; Wu, Tai-Hsuan; Wang, Tzuo-Li; Li, Chien-Yi; Wu, Bing-Tze ^[1]; Zhang, Wenqi; Hong, Jia-Jian; Wong, Jie-Chen; Yeh, Wen-Kuan ^[2]; Lin, Shih-Hung ^[3]

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1. Department of Electronic Engineering, National Kaohsiung Normal University, No. 62, Shenjhong Rd., Yanchao Dist., Kaohsiung City 824, Taiwan (China)
2. Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nanzih District, Kaohsiung City 811, Taiwan (China)
3. Department of Biomedical Engineering, Hungkuang University, No. 1018, Sec. 6, Taiwan Boulevard, Shalu District, Taichung City 433, Taiwan (China)

Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (V{sub TH}) shift, substrate current (I{sub B}), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the V{sub TH} shift was largest at V{sub G} = 0.3 V{sub D}, indicating that the V{sub TH} shift was dominated by interface state generation. Although the strongest impact ionization occurred at V{sub G} = V{sub D}, the V{sub TH} shift was mainly caused by electron trapping resulting from a large gate leakage current.

• OSTI ID: 22293112
• Journal Information: Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
ELECTRIC POTENTIAL
ELECTRONS
FIELD EFFECT TRANSISTORS
INTERFACES
IONIZATION
LEAKAGE CURRENT
STRESSES
SUBSTRATES
TRAPPING